CSD17577Q3A
Manufacturer
Texas Instruments
Description
30-V, N channel NexFET power MOSFET, single SON 3 mm x 3 mm, 6.4 mOhm 8-VSONP -55 to 150
Product Attributes
Type
Contact Plating
Continuous Drain Current (ID)
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Lifecycle Status
Manufacturer Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Pins
Packaging
Power Dissipation
Rds On Max
Rise Time
RoHS
Schedule B
Thickness
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
Tin
35 A
4 mΩ
30 V
Single
4 ns
20 V
900 µm
2.31 nF
Lead Free
3.3 mm
Production (Last Updated: 4 days ago)
ACTIVE (Last Updated: 4 days ago)
150 °C
150 °C
2.8 W
-55 °C
Surface Mount
1
8
Tape & Reel (TR)
53 W
4.8 mΩ
31 ns
Compliant
8541290080
800 µm
20 ns
4 ns
3.3 mm
Product Attributes
Type
Contact Plating
Continuous Drain Current (ID)
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Lifecycle Status
Manufacturer Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Pins
Packaging
Power Dissipation
Rds On Max
Rise Time
RoHS
Schedule B
Thickness
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
Tin
35 A
4 mΩ
30 V
Single
4 ns
20 V
900 µm
2.31 nF
Lead Free
3.3 mm
Production (Last Updated: 4 days ago)
ACTIVE (Last Updated: 4 days ago)
150 °C
150 °C
2.8 W
-55 °C
Surface Mount
1
8
Tape & Reel (TR)
53 W
4.8 mΩ
31 ns
Compliant
8541290080
800 µm
20 ns
4 ns
3.3 mm
prototype to production:
With you at every step
From initial concept to final product, we ensure seamless support at every stage of your manufacturing journey.