CSD17311Q5
Manufacturer
Texas Instruments
Description
30-V, N channel NexFET power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm 8-VSON-CLIP -55 to 150
Product Attributes
Type
Contact Plating
Continuous Drain Current (ID)
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Length
Lifecycle Status
Manufacturer Lifecycle Status
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Elements
Number of Pins
Packaging
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Rise Time
RoHS
Schedule B
Thickness
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
Tin
32 A
1.8 mΩ
30 V
Single
12 ns
10 V
1.05 mm
4.28 nF
5 mm
Production (Last Updated: 1 week ago)
ACTIVE (Last Updated: 1 week ago)
150 °C
3.2 W
-55 °C
Surface Mount
1
8
Digi-Reel®
3.2 W
No
2 mΩ
No SVHC
18 ns
Compliant
8541290080
1 mm
1.2 V
33 ns
12 ns
6 mm
Product Attributes
Type
Contact Plating
Continuous Drain Current (ID)
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Length
Lifecycle Status
Manufacturer Lifecycle Status
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Elements
Number of Pins
Packaging
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Rise Time
RoHS
Schedule B
Thickness
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
Tin
32 A
1.8 mΩ
30 V
Single
12 ns
10 V
1.05 mm
4.28 nF
5 mm
Production (Last Updated: 1 week ago)
ACTIVE (Last Updated: 1 week ago)
150 °C
3.2 W
-55 °C
Surface Mount
1
8
Digi-Reel®
3.2 W
No
2 mΩ
No SVHC
18 ns
Compliant
8541290080
1 mm
1.2 V
33 ns
12 ns
6 mm
prototype to production:
With you at every step
From initial concept to final product, we ensure seamless support at every stage of your manufacturing journey.