Manufacturer
Diodes Inc.
Description
Transistor, NPN, 1A, 20V, SOT89 | Diodes Inc BSS84W-7-F
Type
Case/Package
Contact Plating
Current Rating
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Nominal Vgs
Number of Channels
Number of Elements
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Resistance
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Voltage Rating (DC)
Weight
Width
Description
SOT-323
Tin
-130 mA
6 Ω
-50 V
Single
20 V
1 mm
45 pF
Lead Free
2.2 mm
150 °C
200 mW
-55 °C
Surface Mount
-1.6 V
1
1
3
200 mW
No
10 Ω
No SVHC
10 Ω
Compliant
8541210080, 8541210080|8541210080, 8541210080|8541210080|8541210080, 8541210080|8541210080|8541210080|8541210080
-1.6 V
18 ns
10 ns
-50 V
6.010099 mg
1.35 mm
Type
Case/Package
Contact Plating
Current Rating
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Nominal Vgs
Number of Channels
Number of Elements
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Resistance
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Voltage Rating (DC)
Weight
Width
Description
SOT-323
Tin
-130 mA
6 Ω
-50 V
Single
20 V
1 mm
45 pF
Lead Free
2.2 mm
150 °C
200 mW
-55 °C
Surface Mount
-1.6 V
1
1
3
200 mW
No
10 Ω
No SVHC
10 Ω
Compliant
8541210080, 8541210080|8541210080, 8541210080|8541210080|8541210080, 8541210080|8541210080|8541210080|8541210080
-1.6 V
18 ns
10 ns
-50 V
6.010099 mg
1.35 mm
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