BSC070N10NS3GATMA1
Manufacturer
Infineon
Description
N-Channel 100 V 7 mOhm OptiMOS3 Power-Transistor - PG-TDSON-8
Datasheet
DownloadProduct Attributes
Type
Contact Plating
Continuous Drain Current (ID)
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Gate to Source Voltage (Vgs)
Halogen Free
Input Capacitance
Lead Free
Lifecycle Status
Max Dual Supply Voltage
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Elements
Number of Pins
On-State Resistance
Package Quantity
Packaging
Power Dissipation
Rds On Max
REACH SVHC
Rise Time
RoHS
Schedule B
Threshold Voltage
Description
Tin
90 A
6.3 mΩ
100 V
20 V
Halogen Free
3 nF
Contains Lead
Production (Last Updated: 2 years ago)
100 V
150 °C
114 W
-55 °C
Surface Mount
1
8
7 mΩ
5000
Cut Tape (CT)
114 W
7 mΩ
No SVHC
10 ns
Compliant
8541290080
2.7 V
Product Attributes
Type
Contact Plating
Continuous Drain Current (ID)
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Gate to Source Voltage (Vgs)
Halogen Free
Input Capacitance
Lead Free
Lifecycle Status
Max Dual Supply Voltage
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Elements
Number of Pins
On-State Resistance
Package Quantity
Packaging
Power Dissipation
Rds On Max
REACH SVHC
Rise Time
RoHS
Schedule B
Threshold Voltage
Description
Tin
90 A
6.3 mΩ
100 V
20 V
Halogen Free
3 nF
Contains Lead
Production (Last Updated: 2 years ago)
100 V
150 °C
114 W
-55 °C
Surface Mount
1
8
7 mΩ
5000
Cut Tape (CT)
114 W
7 mΩ
No SVHC
10 ns
Compliant
8541290080
2.7 V
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