BPW20RF
Manufacturer
Vishay
Description
920 nm 50 Sensitivity 10 V 1 nA Through Hole Silicon Photodiode - TO-5
Datasheet
DownloadProduct Attributes
Type
Ambient Temperature Range High
Breakdown Voltage
Capacitance
Case/Package
Dark Current
Diode Type
Fall Time
Forward Current
Forward Voltage
Height
Lead Free
Length
Lens Style
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Max Reverse Voltage (DC)
Min Operating Temperature
Mount
Number of Pins
Packaging
Peak Wavelength
Power Dissipation
Radiation Hardening
REACH SVHC
Response Time
Reverse Breakdown Voltage
Reverse Voltage (DC)
Rise Time
RoHS
Schedule B
Viewing Angle
Wavelength
Width
Description
125 °C
10 V
1.2 nF
TO-5
2 nA
PIN
3.7 µs
50 mA
1 V
3.3 mm
Lead Free
9.1 mm
Flat
125 °C
125 °C
300 mW
10 V
-55 °C
PCB, Through Hole
2
Bulk
920 nm
300 mW
No
Unknown
3.4 µs
10 V
10 V
3.4 µs
Compliant
8541406050, 8541406050|8541406050|8541406050|8541406050|8541406050
100 °
920 nm
9.1 mm
Product Attributes
Type
Ambient Temperature Range High
Breakdown Voltage
Capacitance
Case/Package
Dark Current
Diode Type
Fall Time
Forward Current
Forward Voltage
Height
Lead Free
Length
Lens Style
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Max Reverse Voltage (DC)
Min Operating Temperature
Mount
Number of Pins
Packaging
Peak Wavelength
Power Dissipation
Radiation Hardening
REACH SVHC
Response Time
Reverse Breakdown Voltage
Reverse Voltage (DC)
Rise Time
RoHS
Schedule B
Viewing Angle
Wavelength
Width
Description
125 °C
10 V
1.2 nF
TO-5
2 nA
PIN
3.7 µs
50 mA
1 V
3.3 mm
Lead Free
9.1 mm
Flat
125 °C
125 °C
300 mW
10 V
-55 °C
PCB, Through Hole
2
Bulk
920 nm
300 mW
No
Unknown
3.4 µs
10 V
10 V
3.4 µs
Compliant
8541406050, 8541406050|8541406050|8541406050|8541406050|8541406050
100 °
920 nm
9.1 mm
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