BC817-40
Manufacturer
NXP Semiconductors
Description
Bipolar (Bjt) Single Transistor, General Purpose, Npn, 45 V, 250 Mw, 500 Ma, 250
Datasheet
DownloadProduct Attributes
Type
Ambient Temperature Range High
Collector Base Voltage (VCBO)
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Collector Emitter Voltage (VCEO)
Emitter Base Voltage (VEBO)
Gain Bandwidth Product
Height
hFE Min
Max Collector Current
Max Junction Temperature (Tj)
Number of Elements
Number of Pins
Packaging
Polarity
Power Dissipation
RoHS
Description
150 °C
50 V
45 V
700 mV
45 V
5 V
100 MHz
1.1 mm
250
500 mA
150 °C
1
3
Cut Tape
NPN
250 mW
Non-Compliant
Product Attributes
Type
Ambient Temperature Range High
Collector Base Voltage (VCBO)
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Collector Emitter Voltage (VCEO)
Emitter Base Voltage (VEBO)
Gain Bandwidth Product
Height
hFE Min
Max Collector Current
Max Junction Temperature (Tj)
Number of Elements
Number of Pins
Packaging
Polarity
Power Dissipation
RoHS
Description
150 °C
50 V
45 V
700 mV
45 V
5 V
100 MHz
1.1 mm
250
500 mA
150 °C
1
3
Cut Tape
NPN
250 mW
Non-Compliant
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