Manufacturer
onsemi
Description
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Datasheet
DownloadType
Case/Package
Collector Base Voltage (VCBO)
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Collector Emitter Voltage (VCEO)
Contact Plating
Current Rating
Element Configuration
Emitter Base Voltage (VEBO)
Frequency
Gain Bandwidth Product
Height
hFE Min
Lead Free
Length
Lifecycle Status
Manufacturer Lifecycle Status
Max Breakdown Voltage
Max Collector Current
Max Frequency
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Elements
Number of Pins
Polarity
Power Dissipation
RoHS
Transition Frequency
Voltage Rating (DC)
Weight
Width
Description
TO-92-3
50 V
45 V
700 mV
45 V
Tin
800 mA
Single
5 V
100 MHz
100 MHz
8.77 mm
160
Lead Free
4.58 mm
Production (Last Updated: 3 years ago)
ACTIVE (Last Updated: 3 years ago)
45 V
800 mA
50 MHz
150 °C
150 °C
625 mW
-55 °C
Through Hole
1
3
NPN
625 mW
Compliant
100 MHz
45 V
240 mg
3.86 mm
Type
Case/Package
Collector Base Voltage (VCBO)
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Collector Emitter Voltage (VCEO)
Contact Plating
Current Rating
Element Configuration
Emitter Base Voltage (VEBO)
Frequency
Gain Bandwidth Product
Height
hFE Min
Lead Free
Length
Lifecycle Status
Manufacturer Lifecycle Status
Max Breakdown Voltage
Max Collector Current
Max Frequency
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Elements
Number of Pins
Polarity
Power Dissipation
RoHS
Transition Frequency
Voltage Rating (DC)
Weight
Width
Description
TO-92-3
50 V
45 V
700 mV
45 V
Tin
800 mA
Single
5 V
100 MHz
100 MHz
8.77 mm
160
Lead Free
4.58 mm
Production (Last Updated: 3 years ago)
ACTIVE (Last Updated: 3 years ago)
45 V
800 mA
50 MHz
150 °C
150 °C
625 mW
-55 °C
Through Hole
1
3
NPN
625 mW
Compliant
100 MHz
45 V
240 mg
3.86 mm
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