Manufacturer
Infineon
Description
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS
Datasheet
DownloadType
Case/Package
Contact Plating
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Length
Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
On-State Resistance
Package Quantity
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
TO-220AB
Tin
49 A
55 V
17.5 mΩ
55 V
Single
60 ns
20 V
16.51 mm
1.47 nF
10.66 mm
Obsolete (Last Updated: 4 years ago)
175 °C
175 °C
94 W
-55 °C
Surface Mount, Through Hole
1
1
3
17.5 mΩ
1000
94 W
No
17.5 mΩ
No SVHC
69 ns
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
2 V
44 ns
12 ns
4.82 mm
Type
Case/Package
Contact Plating
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Length
Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
On-State Resistance
Package Quantity
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
TO-220AB
Tin
49 A
55 V
17.5 mΩ
55 V
Single
60 ns
20 V
16.51 mm
1.47 nF
10.66 mm
Obsolete (Last Updated: 4 years ago)
175 °C
175 °C
94 W
-55 °C
Surface Mount, Through Hole
1
1
3
17.5 mΩ
1000
94 W
No
17.5 mΩ
No SVHC
69 ns
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
2 V
44 ns
12 ns
4.82 mm
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