logo
logo
left chevron
right chevron

AUIRFR6215

Manufacturer

Infineon

Description

Automotive Q101 -150V Single P-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS

Datasheet

download datasheetDownload

Product Attributes

Type

Case/Package

Contact Plating

Continuous Drain Current (ID)

Drain to Source Breakdown Voltage

Drain to Source Resistance

Drain to Source Voltage (Vdss)

Element Configuration

Fall Time

Gate to Source Voltage (Vgs)

Height

Input Capacitance

Lead Free

Length

Lifecycle Status

Max Junction Temperature (Tj)

Max Operating Temperature

Max Power Dissipation

Min Operating Temperature

Mount

Number of Channels

Number of Elements

Number of Pins

On-State Resistance

Package Quantity

Power Dissipation

Radiation Hardening

Rds On Max

REACH SVHC

Rise Time

RoHS

Schedule B

Turn-Off Delay Time

Turn-On Delay Time

Width

Description

DPAK

Tin

-13 A

-150 V

295 mΩ

-150 V

Single

37 ns

20 V

2.3876 mm

860 pF

Lead Free

6.7056 mm

Production (Last Updated: 2 years ago)

175 °C

175 °C

110 W

-55 °C

Surface Mount

1

1

3

580 mΩ

3000

110 W

No

295 mΩ

No SVHC

36 ns

Compliant

8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080

53 ns

14 ns

6.22 mm

In Stock


Quantity

MOQ : Unavailable

decrement quantity
increment quantity

Per Unit Price

₹Infinity

Total Price

₹Infinity


delivery

Ships in 7-10 days from Bengaluru

Add to List

Product Attributes

Type

Case/Package

Contact Plating

Continuous Drain Current (ID)

Drain to Source Breakdown Voltage

Drain to Source Resistance

Drain to Source Voltage (Vdss)

Element Configuration

Fall Time

Gate to Source Voltage (Vgs)

Height

Input Capacitance

Lead Free

Length

Lifecycle Status

Max Junction Temperature (Tj)

Max Operating Temperature

Max Power Dissipation

Min Operating Temperature

Mount

Number of Channels

Number of Elements

Number of Pins

On-State Resistance

Package Quantity

Power Dissipation

Radiation Hardening

Rds On Max

REACH SVHC

Rise Time

RoHS

Schedule B

Turn-Off Delay Time

Turn-On Delay Time

Width

Description

DPAK

Tin

-13 A

-150 V

295 mΩ

-150 V

Single

37 ns

20 V

2.3876 mm

860 pF

Lead Free

6.7056 mm

Production (Last Updated: 2 years ago)

175 °C

175 °C

110 W

-55 °C

Surface Mount

1

1

3

580 mΩ

3000

110 W

No

295 mΩ

No SVHC

36 ns

Compliant

8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080

53 ns

14 ns

6.22 mm

Other Parts in the same category

IRF540NSTRLPBF

IRF540NSTRLPBF

Transistor MOSFET N Channel 100 Volt 33 Amp 3-Pin 2+ Tab D2pak Tape And Reel

IRFZ44NPBF

IRFZ44NPBF

MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 17.5 Milliohms; ID 49A; TO-220AB; PD 94W; -55deg

IRFZ44NSTRLPBF

IRFZ44NSTRLPBF

MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 17.5 Milliohms; ID 49A; D2Pak; PD 94W; VGS +/-20

IRFZ44NLPBF

IRFZ44NLPBF

Single N-Channel 55 V 17.5 mOhm 63 nC HEXFET® Power Mosfet - TO-262

AUIRFZ44N

AUIRFZ44N

Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS

CSD17575Q3

CSD17575Q3

30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 3.2 mOhm 8-VSON-CLIP

orange wave graphic

prototype to production:
With you at every step

From initial concept to final product, we ensure seamless support at every stage of your manufacturing journey.

orange wave graphic