2N7002-G
Manufacturer
Microchip
Description
Power Field-Effect Transistor, 0.25A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Datasheet
DownloadProduct Attributes
Type
Ambient Temperature Range High
Case/Package
Contact Plating
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Lifecycle Status
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
RoHS
Schedule B
Turn-Off Delay Time
Turn-On Delay Time
Weight
Width
Description
150 °C
SOT-23
Tin
115 mA
60 V
7.5 Ω
60 V
Single
30 V
1.12 mm
50 pF
Lead Free
2.92 mm
Production (Last Updated: 4 years ago)
150 °C
360 mW
-55 °C
Surface Mount
1
1
3
360 mW
No
7.5 Ω
Compliant
8542390000, 8542390000|8542390000|8542390000|8542390000|8542390000
20 ns
20 ns
1.437803 g
1.3 mm
Product Attributes
Type
Ambient Temperature Range High
Case/Package
Contact Plating
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Lifecycle Status
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
RoHS
Schedule B
Turn-Off Delay Time
Turn-On Delay Time
Weight
Width
Description
150 °C
SOT-23
Tin
115 mA
60 V
7.5 Ω
60 V
Single
30 V
1.12 mm
50 pF
Lead Free
2.92 mm
Production (Last Updated: 4 years ago)
150 °C
360 mW
-55 °C
Surface Mount
1
1
3
360 mW
No
7.5 Ω
Compliant
8542390000, 8542390000|8542390000|8542390000|8542390000|8542390000
20 ns
20 ns
1.437803 g
1.3 mm
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