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2N2907A

Manufacturer

Microchip

Description

Trans GP BJT PNP 60V 0.6A 500mW 3-Pin TO-18 Bag

Datasheet

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Product Attributes

Type

Case/Package

Collector Base Voltage (VCBO)

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Collector Emitter Voltage (VCEO)

Contact Plating

Emitter Base Voltage (VEBO)

Height

hFE Min

Lead Free

Max Collector Current

Max Junction Temperature (Tj)

Max Operating Temperature

Max Power Dissipation

Min Operating Temperature

Mount

Number of Elements

Number of Pins

Polarity

Power Dissipation

Radiation Hardening

RoHS

Schedule B

Description

TO-18

60 V

60 V

400 mV

60 V

Lead, Tin

5 V

5.33 mm

40

Contains Lead

600 mA

200 °C

200 °C

500 mW

-65 °C

Through Hole

1

3

PNP

500 mW

No

Non-Compliant

8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|85

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Product Attributes

Type

Case/Package

Collector Base Voltage (VCBO)

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Collector Emitter Voltage (VCEO)

Contact Plating

Emitter Base Voltage (VEBO)

Height

hFE Min

Lead Free

Max Collector Current

Max Junction Temperature (Tj)

Max Operating Temperature

Max Power Dissipation

Min Operating Temperature

Mount

Number of Elements

Number of Pins

Polarity

Power Dissipation

Radiation Hardening

RoHS

Schedule B

Description

TO-18

60 V

60 V

400 mV

60 V

Lead, Tin

5 V

5.33 mm

40

Contains Lead

600 mA

200 °C

200 °C

500 mW

-65 °C

Through Hole

1

3

PNP

500 mW

No

Non-Compliant

8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|85

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