2N2222A
Manufacturer
Microchip
Description
TRANS NPN 50V 0.8A TO18 Bipolar (BJT) Transistor NPN 50 V 800 mA 500 mW Through Hole TO-18
Datasheet
DownloadProduct Attributes
Type
Case/Package
Collector Base Voltage (VCBO)
Collector Emitter Breakdown Voltage
Collector Emitter Voltage (VCEO)
Emitter Base Voltage (VEBO)
Height
hFE Min
Lifecycle Status
Max Collector Current
Max Junction Temperature (Tj)
Max Operating Temperature
Min Operating Temperature
Number of Elements
Power Dissipation
RoHS
Schedule B
Description
TO-18
75 V
50 V
50 V
6 V
5.33 mm
100
Production (Last Updated: 6 months ago)
800 mA
200 °C
200 °C
-65 °C
1
500 mW
Compliant
8541210080, 8541290080
Product Attributes
Type
Case/Package
Collector Base Voltage (VCBO)
Collector Emitter Breakdown Voltage
Collector Emitter Voltage (VCEO)
Emitter Base Voltage (VEBO)
Height
hFE Min
Lifecycle Status
Max Collector Current
Max Junction Temperature (Tj)
Max Operating Temperature
Min Operating Temperature
Number of Elements
Power Dissipation
RoHS
Schedule B
Description
TO-18
75 V
50 V
50 V
6 V
5.33 mm
100
Production (Last Updated: 6 months ago)
800 mA
200 °C
200 °C
-65 °C
1
500 mW
Compliant
8541210080, 8541290080
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