2SA1943N(S1,E,S)
Manufacturer
Toshiba
Description
Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, PNP, Silicon
Datasheet
DownloadProduct Attributes
Type
Collector Base Voltage (VCBO)
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Collector Emitter Voltage (VCEO)
Continuous Collector Current
Element Configuration
Emitter Base Voltage (VEBO)
Gain Bandwidth Product
hFE Min
Max Collector Current
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Polarity
RoHS
Schedule B
Transition Frequency
Weight
Description
-230 V
230 V
-1.1 V
3 V
-15 A
Single
-5 V
30 MHz
35
15 A
150 °C
150 W
-55 °C
Through Hole
PNP
Compliant
8541290080
30 MHz
6.961991 g
Product Attributes
Type
Collector Base Voltage (VCBO)
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Collector Emitter Voltage (VCEO)
Continuous Collector Current
Element Configuration
Emitter Base Voltage (VEBO)
Gain Bandwidth Product
hFE Min
Max Collector Current
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Polarity
RoHS
Schedule B
Transition Frequency
Weight
Description
-230 V
230 V
-1.1 V
3 V
-15 A
Single
-5 V
30 MHz
35
15 A
150 °C
150 W
-55 °C
Through Hole
PNP
Compliant
8541290080
30 MHz
6.961991 g
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